MODELING AND SIMULATION OF HgCdTe BASED PHOTODETECTOR
نویسندگان
چکیده
In this work an analytical modeling of p+-Hg0.81Cd0.19Te/n0-Hg0.81Cd0.19Te/CdZnTe, homojunction photodetector has been analyzed theoretically at 77K. A generic model of HgCdTe based photovoltaic detector has been developed using the closed form equations. Device parameters are obtained of the proposed photodetector and studied in terms of dark current, resistance area-product, quantum efficiency and detectivity. Study reveal that at suitable biasing conditions, the photodetector exhibits a high detectivity (2.6×10 9 mHz 1/2 /W) and suitable efficiency lies in wavelength range 15.5-19 μm with its peak at 17 μm. Proposed photodetector is best suited for N2O gas detection whose characteristic wavelength is 17 μm.
منابع مشابه
Quantum modeling of light absorption in graphene based photo-transistors
Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a...
متن کاملModeling of HOT (111) HgCdTe MWIR Detector For Fast Response Operation
The paper reports on photoelectrical performance of the mid-wave infrared (MWIR) (111) HgCdTe high operating temperature (HOT) detector for the fast response conditions. Detector structure was simulated with software APSYS by Crosslight Inc. The detailed analysis of the time response as a function of device architecture and applied bias is performed pointing out optimal working conditions.
متن کاملModeling and Simulation of Integrated Luminescence Detection Platforms
We developed a simulation model of an integrated CMOS-based imaging platform for use with bioluminescent DNA microarrays. We formulate the complete kinetic model of ATP based assays and luciferase label-based assays. The model first calculates the number of photons generated per unit time, i.e., photon flux, based upon the kinetics of the light generation process of luminescence probes. The pho...
متن کاملFinite Element Modeling and Simulation of Photoconductive and Ballistic Semiconductor Nanodevices
This thesis presents models, simulation techniques, and simulation results for two types of semiconductor nanodevice; the metal-semiconductor-metal (MSM) photodetector, and the ballistic deflection transistor (BDT). Our simulation tools were developed using the commercial ComsolTM finite element analysis (FEA) field solver to obtain the numeric solutions. Finite element models have been develop...
متن کاملComputational Modeling of Nonlinearity in a PIN Photodetector
In this work, we use a variant of the drift-diffusion equations to investigate nonlinearity of a cylindrical pi-n heterojunction photodetector made from InP and InGaAs [2]. Earlier work has shown that this model can accurately reproduce the principal features of experiments even with simple one-dimensional (1D) simulations if the effective radius of the current flow is properly chosen [2]. An a...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2011